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2023
Ayache R. Effect of Ion Implantation Temperature on Formation of Nanometric β-FeSi2 Layer. Advanced Engineering Technology and Application [Internet]. 2023;12 (3) :15-19. Publisher's VersionAbstract
A nanometric buried layer of iron disilicide was synthesized by ion implantation in Si(1 1 1) p-type at different temperatures using 195 keV Fe ions with a dose of \(2\).\(10^{17}\)\(Fe^{+}/cm^{2}\). The investigation of the phase composition is carried out by
Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by X-ray diffraction (XRD) pole figure. The process of the silicidation has been investigated at a function of the ion implantation temperatures ranging from 200 to 440 °C. The precipitates favor epitaxial growth with respect to Si(1 1 1) planes with epitaxial relationships \( \beta\)-FeSi\(_{2}\)(2 2 0) //Si(1 1 1) and/or \(\beta\)-FeSi\(_{2}\) (2 0 2) // Si(1 1 1).
 
2021
Fiad H, Ayache R, Bouabellou A, Sedrati C. Formation of Nanometric Yttrium Silicides Layers onto Si (111) Substrate by Ion Implantation. Silicon [Internet]. 2021;13 (7) :2271–2274. Publisher's VersionAbstract
Nanometric YSi2 − x yttrium silicides layers have been formed onto a Si(111) single-crystal substrate by implantation at room temperature (RT) of Y ions using an energy of 195 keV and a dose of 2 × 1017 Y+/cm2 followed by a thermal annealing in a nitrogen atmosphere. The process of the silicidation has been investigated at a function of the annealing temperatures ranging from 600 to 1000 °C for duration of one hour. The characterization of the samples has been performed using X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and scanning electron microscopy combined with energy dispersive X-ray spectrometer (SEM-EDS) techniques. Studies have shown that the YSi2 − x layer is epitaxially grown on the Si (111) surface, and after thermal annealing at a temperature of 600–1000 °C, no change in the properties of the formed phase is found.
2020
Physique et Biophysique (Cours & Exercices Corrigés)
Ayache R. Physique et Biophysique (Cours & Exercices Corrigés). El-Eulma: EL BADR ESSATIE IMPRESSION ET EDITION- ISBN: 978-9931-752-14-1; 2020 pp. 328.Abstract

Cet ouvrage destiné aux étudiants en:

- 1ière, 2ème & 3ème Année Sciences Médicales (Médecine, Pharmacie et Chirurgie Dentaire)

- Paramédical (Radiologie, hygiène, PPH)

- Vétérinaire

- Biologie 

-SM (1ière+2ème+3ème Année)

-ST (1ière Année)

Table des matieres
2019
Ayache R. Study of Nickel Silicide Formed by Ion Beam Mixing. International Journal of Thin Films Science and Technology [Internet]. 2019;8 (2) :37-41. Publisher's Version
2015
Ayache R, Sidoumou M, Kolitsch A. Ion Beam Synthesis of Cobalt Silicide Layers in Si(111). International Journal of Thin Films Science and Technology [Internet]. 2015;4 (3) :211-213. Publisher's Version
2014
Ayache R. Study of Iron Silicide Formed by Ion Beam Mixing. Nano Science and Nano Technology [Internet]. 2014;2 (2) :52-55. Publisher's Version
2012
Ayache R, Bouabellou A. Structural and optical characterization of ß-FeSi2 layers formedby ion beam synthesis. Nano Science & Nano Technology: An Indian Journal [Internet]. 2012;6 (2) :79-82. Publisher's Version
2010
Ayache R, Bouabellou A, Eichhorn F. Study of ion beam synthesized YSi 2-x layers. International Journal of Nanoscience| [Internet]. 2010;9 (6) :549-552. Publisher's Version
2009
Ayache R, Bouabellou A, Eichhorn F. Yttrium silicide films into Si(111) - Fabrication and properties. Superlattices and Microstructures [Internet]. 2009;45 (4-5) :388-392. Publisher's VersionAbstract
The SAO/NASA Astrophysics Data System
2007
Ayache R, Bouabellou A, Eichhorn F, Richter E, Mücklich A. Ion beam synthesis and characterization of yttrium silicide in Si(111). Materials Science and Engineering: C [Internet]. 2007;27 (5-8) :1479-1481. Publisher's VersionAbstract

 

International Atomic Energy Agency (IAEA)

 

2006
Ayache R. Surface modification of Si(111) substrate by iron ion implantation: Growth of a thin ß- FeSi2 layer. Review of Scientific Instruments [Internet]. 2006;77 (3) :03C108-03C108-3. Publisher's VersionAbstract
The SAO/NASA Astrophysics Data System
2005
Ayache R. Preparation and characterization of transition metal silicides. Physics Department [Internet]. 2005. Publisher's Version
2004
Ayache R, Bouabellou A, Eichhorn F, Richter E. Structural and optical propertiers of β-FeSi2 phase prepared by ion beam synthesis. · Reviews on advanced materials science [Internet]. 2004;8 (1) :97-100. Publisher's VersionAbstract

 

Ayache R, Bouabellou A, Richter R. Optical characterization of β-FeSi2 layers formed by ion beam synthesis. Materials Science in Semiconductor Processing [Internet]. 2004;7 (4-6) :463-466. Publisher's VersionAbstract

TIB Technik/Naturwissenschaften (Science/Technology), TIB Conti-Campus sites (Social Sciences)

Ayache R, Richter E, Bouabellou A. Microstructure of β-FeSi2 buried layers synthesis by ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms [Internet]. 2004;216 (1) :137-142. Publisher's VersionAbstract
International Atomic Energy Agency (IAEA)