@article {47955,
	title = {Formation of Nanometric Yttrium Silicides Layers onto Si (111) Substrate by Ion Implantation},
	journal = {Silicon},
	volume = {13},
	number = {7},
	year = {2021},
	pages = {2271{\textendash}2274},
	abstract = {Nanometric YSi2 - x\&nbsp;yttrium silicides layers have been formed onto a Si(111) single-crystal substrate by implantation at room temperature (RT) of Y ions using an energy of 195\&nbsp;keV and a dose of 2 {\texttimes} 1017\&nbsp;Y+/cm2\&nbsp;followed by a thermal annealing in a nitrogen atmosphere. The process of the silicidation has been investigated at a function of the annealing temperatures ranging from 600 to 1000\&nbsp;{\textdegree}C for duration of one hour. The characterization of the samples has been performed using X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and scanning electron microscopy combined with energy dispersive X-ray spectrometer (SEM-EDS) techniques. Studies have shown that the YSi2 - x\&nbsp;layer is epitaxially grown on the Si (111) surface, and after thermal annealing at a temperature of 600{\textendash}1000\&nbsp;{\textdegree}C, no change in the properties of the formed phase is found.},
	url = {https://link.springer.com/journal/12633/volumes-and-issues/13-7},
	author = {H. Fiad and R. Ayache and A. Bouabellou and C. Sedrati}
}
