@article {87506,
	title = {Effect of Ion Implantation Temperature on Formation of Nanometric β-FeSi2 Layer},
	journal = {Advanced Engineering Technology and Application},
	volume = {12},
	number = {3},
	year = {2023},
	pages = {15-19},
	abstract = {A nanometric buried layer of iron disilicide was synthesized by ion implantation in Si(1 1 1) p-type at different\&nbsp;temperatures using 195 keV Fe ions with a dose of \(2\).\(10^{17}\)\(Fe^{+}/cm^{2}\). The investigation of the phase composition is carried out byRutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by X-ray diffraction (XRD) pole\&nbsp;figure. The process of the silicidation has been investigated at a function of the ion implantation temperatures ranging from 200 to\&nbsp;440 {\textdegree}C. The precipitates favor epitaxial growth with respect to Si(1 1 1) planes with epitaxial relationships \( \beta\)-FeSi\(_{2}\)(2 2 0) //Si(1 1 1) and/or \(\beta\)-FeSi\(_{2}\) (2 0 2) // Si(1 1 1).\&nbsp;},
	url = {https://www.naturalspublishing.com/ContIss.asp?IssID=1963},
	author = {R. Ayache}
}
