<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">H. Fiad</style></author><author><style face="normal" font="default" size="100%">R. Ayache</style></author><author><style face="normal" font="default" size="100%">A. Bouabellou</style></author><author><style face="normal" font="default" size="100%">C. Sedrati</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Formation of Nanometric Yttrium Silicides Layers onto Si (111) Substrate by Ion Implantation</style></title><secondary-title><style face="normal" font="default" size="100%">Silicon</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/journal/12633/volumes-and-issues/13-7</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">13</style></volume><pages><style face="normal" font="default" size="100%">2271–2274</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Nanometric YSi&lt;sub&gt;2 − x&lt;/sub&gt;&amp;nbsp;yttrium silicides layers have been formed onto a Si(111) single-crystal substrate by implantation at room temperature (RT) of Y ions using an energy of 195&amp;nbsp;keV and a dose of 2 × 10&lt;sup&gt;17&lt;/sup&gt;&amp;nbsp;Y&lt;sup&gt;+&lt;/sup&gt;/cm&lt;sup&gt;2&lt;/sup&gt;&amp;nbsp;followed by a thermal annealing in a nitrogen atmosphere. The process of the silicidation has been investigated at a function of the annealing temperatures ranging from 600 to 1000&amp;nbsp;°C for duration of one hour. The characterization of the samples has been performed using X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and scanning electron microscopy combined with energy dispersive X-ray spectrometer (SEM-EDS) techniques. Studies have shown that the YSi&lt;sub&gt;2 − x&lt;/sub&gt;&amp;nbsp;layer is epitaxially grown on the Si (111) surface, and after thermal annealing at a temperature of 600–1000&amp;nbsp;°C, no change in the properties of the formed phase is found.</style></abstract><issue><style face="normal" font="default" size="100%">7</style></issue></record></records></xml>