<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">F.Djeffal</style></author><author><style face="normal" font="default" size="100%">N. Lakhdar</style></author><author><style face="normal" font="default" size="100%">A. Behaya</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An accurate two-dimensional analytical subthreshold swing model to study the scaling capability of the surrounding-gate MOSFET</style></title><secondary-title><style face="normal" font="default" size="100%">International Review of Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.praiseworthyprize.com/IREPHY-latest/IREPHY_vol_2_n_5.html</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">pp. 306-311, 2(5)</style></volume><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>