<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">F.Djeffal</style></author><author><style face="normal" font="default" size="100%">M. Meguellati</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">Physica E: Low-dimensional Systems and Nanostructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.sciencedirect.com/science/article/pii/S1386947709003051</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">pp. 1872-1877, 41</style></volume><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>