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Pr. BENHAYA Abdelhamid
Professeur (Enseignant-Chercheur)
Faculté de Technologie, Département d'Électronique
Université Batna 2
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2011
Soualmia S, Bouldjedri A, Benhaya A
.
Semiconductor parameter extraction using cathodoluminescence and genetic algorithms
. Materials science in semiconductor processing [Internet]. 2011;Vol.14 (N°1) :pp. 62-68.
Publisher's Version
2010
Bendib T, F.Djeffal, Benhaya A
.
A PSO-based approach to study the nanoscale Double Gate- MOSFETs
. Review of Sciences and Technology. 2010;pp. 14-22, Vol.1(2).
F.Djeffal, Bendib T, Benzid R, Benhaya A
.
An approach based on particle swarm computation to simulate the nanoscale DG MOSFET-based circuits
. Turkish Journal of Electrical Engineering & Computer Sciences [Internet]. 2010;pp. 1131-1141, Vol. 18 (06).
Publisher's Version
2009
F.Djeffal, Meguellati M, Benhaya A
.
A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs
. Physica E: Low-dimensional Systems and Nanostructures [Internet]. 2009;pp. 1872-1877, 41.
Publisher's Version
F.Djeffal, Lakhdar N, Meguellati M, Benhaya A
.
Particle swarm optimization versus genetic algorithms to study the electron mobility in wurtzite GaN-based devices
. Solid-State Electronics [Internet]. 2009;pp.388-392, 53(9).
Publisher's Version
Bendib T, F.Djeffal, Maguellati M, Benhaya A, M.Chahdi
.
A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs
. J. Semiconductor Physics, Quantum Electronics and Optoelectronics [Internet]. 2009;pp. 27-30,12(1).
Publisher's Version
Bendib T
.
A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs
. J. Semiconductor Physics, Quantum Electronics and Optoelectronics [Internet]. 2009;pp. 27-30,12(1).
Publisher's Version
2008
F.Djeffal, Lakhdar N, Behaya A
.
An accurate two-dimensional analytical subthreshold swing model to study the scaling capability of the surrounding-gate MOSFET
. International Review of Physics [Internet]. 2008;pp. 306-311, 2(5).
Publisher's Version
F.Djeffal, S.Guessasma, Benhaya A, M.Chahdi
.
A neural computation to study the scaling capability of the undoped DG MOSFET
. J. Semiconductor Physics, Quantum Electronics and Optoelectronics [Internet]. 2008;pp. 196-202, 11(2).
Publisher's Version
2007
F.Djeffal, Abdi A, Dibi Z, M.Chahdi, Benhaya A
.
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All around MOSFETs
. Materials Sciences &Engineering B [Internet]. 2007;pp.1111-1116, 27(5).
Publisher's Version
F.Djeffal, M.Chahdi, Benhaya A, M.L.Hafiane
.
An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter
. Solid-State Electronics [Internet]. 2007;pp.26-34, 51 (1).
Publisher's Version
2005
F.Djeffal, Benhaya A, M.Chahdi
.
An improved experimental setup based on programmable electronics to determine the transport coefficients of semiconductors
. J. Advancement of Modelling and Simulation Techniques in Enterprises. 2005;pp. 55-70, 78 (6).
F.Djeffal, S.Guessasma, Benhaya A, M.Chahdi
.
An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETs
. Journal of Semicond. Sci. Technol [Internet]. 2005;pp.158-164, 20(2).
Publisher's Version
Benhaya A, Granier B
.
An analytical model to study the dynamic oxidation of graphite at high mass transfer rate in the diffusion controlled regime
. AMSE Journal [Internet]. 2005;Vol. 66 (1) :1-6.
Publisher's Version
1997
Benhaya A, Granier B
.
High temperature device for the study of the dynamic oxidation of refractory compounds. Application to graphite
. Chemical Engineering and and Proceesing [Internet]. 1997;36, 433-441.
Publisher's Version
1990
Benhaya A, Granier B
.
DISPOSITIF PLASMA POUR L’OXYDATION DYNAMIQUE DE RÉFRACTAIRES. APPLICATION AU GRAPHITE
. Journal de Physique Colloques [Internet]. 1990;51 (C5) pp.C5-419-C5-424.
Publisher's Version
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