Citation:
Ayache R. Effect of Ion Implantation Temperature on Formation of Nanometric β-FeSi2 Layer. Advanced Engineering Technology and Application [Internet]. 2023;12 (3) :15-19.
Abstract:
A nanometric buried layer of iron disilicide was synthesized by ion implantation in Si(1 1 1) p-type at different temperatures using 195 keV Fe ions with a dose of \(2\).\(10^{17}\)\(Fe^{+}/cm^{2}\). The investigation of the phase composition is carried out byRutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by X-ray diffraction (XRD) pole figure. The process of the silicidation has been investigated at a function of the ion implantation temperatures ranging from 200 to 440 °C. The precipitates favor epitaxial growth with respect to Si(1 1 1) planes with epitaxial relationships \( \beta\)-FeSi\(_{2}\)(2 2 0) //Si(1 1 1) and/or \(\beta\)-FeSi\(_{2}\) (2 0 2) // Si(1 1 1).
