Soualmia S, Bouldjedri A, Benhaya A. Semiconductor parameter extraction using cathodoluminescence and genetic algorithms. Materials science in semiconductor processing [Internet]. 2011;Vol.14 (N°1) :pp. 62-68. Publisher's Version

Bendib T, F.Djeffal, Benhaya A. A PSO-based approach to study the nanoscale Double Gate- MOSFETs. Review of Sciences and Technology. 2010;pp. 14-22, Vol.1(2).

F.Djeffal, Bendib T, Benzid R, Benhaya A. An approach based on particle swarm computation to simulate the nanoscale DG MOSFET-based circuits. Turkish Journal of Electrical Engineering & Computer Sciences [Internet]. 2010;pp. 1131-1141, Vol. 18 (06). Publisher's Version

F.Djeffal, Meguellati M, Benhaya A. A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs. Physica E: Low-dimensional Systems and Nanostructures [Internet]. 2009;pp. 1872-1877, 41. Publisher's Version

F.Djeffal, Lakhdar N, Meguellati M, Benhaya A. Particle swarm optimization versus genetic algorithms to study the electron mobility in wurtzite GaN-based devices. Solid-State Electronics [Internet]. 2009;pp.388-392, 53(9). Publisher's Version

Bendib T, F.Djeffal, Maguellati M, Benhaya A, M.Chahdi. A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs. J. Semiconductor Physics, Quantum Electronics and Optoelectronics [Internet]. 2009;pp. 27-30,12(1). Publisher's Version

Bendib T. A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs. J. Semiconductor Physics, Quantum Electronics and Optoelectronics [Internet]. 2009;pp. 27-30,12(1). Publisher's Version

F.Djeffal, Lakhdar N, Behaya A. An accurate two-dimensional analytical subthreshold swing model to study the scaling capability of the surrounding-gate MOSFET. International Review of Physics [Internet]. 2008;pp. 306-311, 2(5). Publisher's Version

F.Djeffal, S.Guessasma, Benhaya A, M.Chahdi. A neural computation to study the scaling capability of the undoped DG MOSFET. J. Semiconductor Physics, Quantum Electronics and Optoelectronics [Internet]. 2008;pp. 196-202, 11(2). Publisher's Version

F.Djeffal, Abdi A, Dibi Z, M.Chahdi, Benhaya A. A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All around MOSFETs. Materials Sciences &Engineering B [Internet]. 2007;pp.1111-1116, 27(5). Publisher's Version

F.Djeffal, M.Chahdi, Benhaya A, M.L.Hafiane. An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter. Solid-State Electronics [Internet]. 2007;pp.26-34, 51 (1). Publisher's Version

F.Djeffal, Benhaya A, M.Chahdi. An improved experimental setup based on programmable electronics to determine the transport coefficients of semiconductors. J. Advancement of Modelling and Simulation Techniques in Enterprises. 2005;pp. 55-70, 78 (6).

F.Djeffal, S.Guessasma, Benhaya A, M.Chahdi. An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETs. Journal of Semicond. Sci. Technol [Internet]. 2005;pp.158-164, 20(2). Publisher's Version

Benhaya A, Granier B. An analytical model to study the dynamic oxidation of graphite at high mass transfer rate in the diffusion controlled regime. AMSE Journal [Internet]. 2005;Vol. 66 (1) :1-6. Publisher's Version

Benhaya A, Granier B. High temperature device for the study of the dynamic oxidation of refractory compounds. Application to graphite. Chemical Engineering and and Proceesing [Internet]. 1997;36, 433-441. Publisher's Version

Benhaya A, Granier B. DISPOSITIF PLASMA POUR L’OXYDATION DYNAMIQUE DE RÉFRACTAIRES. APPLICATION AU GRAPHITE. Journal de Physique Colloques [Internet]. 1990;51 (C5) pp.C5-419-C5-424. Publisher's Version