Abstract:

Nanometric YSi_2 − x yttrium silicides layers have been formed onto a Si(111) single-crystal substrate by implantation at room temperature (RT) of Y ions using an energy of 195 keV and a dose of 2 × 10¹⁷ Y⁺/cm² followed by a thermal annealing in a nitrogen atmosphere. The process of the silicidation has been investigated at a function of the annealing temperatures ranging from 600 to 1000 °C for duration of one hour. The characterization of the samples has been performed using X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and scanning electron microscopy combined with energy dispersive X-ray spectrometer (SEM-EDS) techniques. Studies have shown that the YSi_2 − x layer is epitaxially grown on the Si (111) surface, and after thermal annealing at a temperature of 600–1000 °C, no change in the properties of the formed phase is found.

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